FDI047AN08A0
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FDI047AN08A0
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | MOSFET N-CH 75V 80A TO-262AB |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | I2PAK (TO-262) |
Series | PowerTrench® |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 80A, 10V |
Power Dissipation (Max) | 310W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 6600pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 75V |
Detailed Description | N-Channel 75V 80A (Tc) 310W (Tc) Through Hole I2PAK (TO-262) |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
RFQ |
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