FQB2N80TM
FQB2N80TM
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | MOSFET N-CH 800V 2.4A D2PAK |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | D²PAK (TO-263AB) |
Series | QFET® |
Rds On (Max) @ Id, Vgs | 6.3 Ohm @ 900mA, 10V |
Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 800V |
Detailed Description | N-Channel 800V 2.4A (Tc) 3.13W (Ta), 85W (Tc) Surface Mount D²PAK (TO-263AB) |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
RFQ |
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