FQD19N10TM_F080
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FQD19N10TM_F080
| Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|
| Description | MOSFET N-CH 100V 15.6A DPAK |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | D-Pak |
| Series | QFET® |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 7.8A, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Detailed Description | N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak |
| Current - Continuous Drain (Id) @ 25°C | 15.6A (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$0.836
- 30 pcs$0.764
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of FQD19N10TM_F080
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