FQD4N20LTM
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FQD4N20LTM
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | MOSFET N-CH 200V 3.2A DPAK |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | D-Pak |
Series | QFET® |
Rds On (Max) @ Id, Vgs | 1.35 Ohm @ 1.6A, 10V |
Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Drain to Source Voltage (Vdss) | 200V |
Detailed Description | N-Channel 200V 3.2A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount D-Pak |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
RFQ |
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