HUF76609D3
HUF76609D3
Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|
Description | MOSFET N-CH 100V 10A TO-251AA |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Vgs (Max) | ±16V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-251AA |
Series | UltraFET™ |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 10A, 10V |
Power Dissipation (Max) | 49W (Tc) |
Packaging | Tube |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 425pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 10A (Tc) 49W (Tc) Through Hole TO-251AA |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
RFQ |
Reference Price(In US Dollars)
- 5 pcs$0.143
- 50 pcs$0.115
- 150 pcs$0.103
- 500 pcs$0.087
- 2500 pcs$0.08
- 5000 pcs$0.076
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of HUF76609D3
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