EPC2010C
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EPC2010C
| Manufacturer | EPC |
|---|---|
| Description | TRANS GAN 200V 22A BUMPED DIE |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Vgs (Max) | +6V, -4V |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | Die Outline (7-Solder Bar) |
| Series | eGaN® |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 12A, 5V |
| Power Dissipation (Max) | - |
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Other Names | 917-1085-2 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 12 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 5.3nC @ 5V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Drain to Source Voltage (Vdss) | 200V |
| Detailed Description | N-Channel 200V 22A (Ta) Surface Mount Die Outline (7-Solder Bar) |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| RFQ | |
Reference Price(In US Dollars)
- 500 pcs$5.017
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of EPC2010C
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