IRFSL9N60A
IRFSL9N60A
Manufacturer | Electro-Films (EFI) / Vishay |
---|---|
Description | MOSFET N-CH 600V 9.2A TO-262 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-262-3 |
Series | - |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 5.5A, 10V |
Power Dissipation (Max) | 170W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Other Names | *IRFSL9N60A |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-262-3 |
Current - Continuous Drain (Id) @ 25°C | 9.2A (Tc) |
RFQ |
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