SI2309CDS-T1-GE3
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SI2309CDS-T1-GE3
Manufacturer | Electro-Films (EFI) / Vishay |
---|---|
Description | MOSFET P-CH 60V 1.6A SOT23-3 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | SOT-23-3 (TO-236) |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 345 mOhm @ 1.25A, 10V |
Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Other Names | SI2309CDS-T1-GE3-ND SI2309CDS-T1-GE3TR SI2309CDST1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 33 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 4.5V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 60V |
Detailed Description | P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
RFQ |
Reference Price(In US Dollars)
- 1 pcs$0.619
- 10 pcs$0.523
- 30 pcs$0.455
- 100 pcs$0.40
- 500 pcs$0.105
- 1000 pcs$0.096
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SI2309CDS-T1-GE3
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