SI3867DV-T1-E3
SI3867DV-T1-E3
Manufacturer | Electro-Films (EFI) / Vishay |
---|---|
Description | MOSFET P-CH 20V 3.9A 6-TSOP |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 6-TSOP |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 51 mOhm @ 5.1A, 4.5V |
Power Dissipation (Max) | 1.1W (Ta) |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Other Names | SI3867DV-T1-E3TR SI3867DVT1E3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | P-Channel 20V 3.9A (Ta) 1.1W (Ta) Surface Mount 6-TSOP |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
RFQ |
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Introduce of SI3867DV-T1-E3
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