SI5406DC-T1-GE3
SI5406DC-T1-GE3
Manufacturer | Electro-Films (EFI) / Vishay |
---|---|
Description | MOSFET N-CH 12V 6.9A 1206-8 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 600mV @ 1.2mA (Min) |
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 1206-8 ChipFET™ |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 6.9A, 4.5V |
Power Dissipation (Max) | 1.3W (Ta) |
Packaging | Tape & Reel (TR) |
Package / Case | 8-SMD, Flat Lead |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Drain to Source Voltage (Vdss) | 12V |
Detailed Description | N-Channel 12V 6.9A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™ |
Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta) |
RFQ |
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