SI7911DN-T1-GE3
SI7911DN-T1-GE3
Manufacturer | Electro-Films (EFI) / Vishay |
---|---|
Description | MOSFET 2P-CH 20V 4.2A 1212-8 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Supplier Device Package | PowerPAK® 1212-8 Dual |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 51 mOhm @ 5.7A, 4.5V |
Power - Max | 1.3W |
Packaging | Cut Tape (CT) |
Package / Case | PowerPAK® 1212-8 Dual |
Other Names | SI7911DN-T1-GE3CT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | - |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | Mosfet Array 2 P-Channel (Dual) 20V 4.2A 1.3W Surface Mount PowerPAK® 1212-8 Dual |
Current - Continuous Drain (Id) @ 25°C | 4.2A |
Base Part Number | SI7911 |
RFQ |
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Introduce of SI7911DN-T1-GE3
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