SI8415DB-T1-E1
SI8415DB-T1-E1
Manufacturer | Electro-Films (EFI) / Vishay |
---|---|
Description | MOSFET P-CH 12V 5.3A 2X2 4-MFP |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 4-Microfoot |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 37 mOhm @ 1A, 4.5V |
Power Dissipation (Max) | 1.47W (Ta) |
Packaging | Tape & Reel (TR) |
Package / Case | 4-XFBGA, CSPBGA |
Other Names | SI8415DB-T1-E1TR SI8415DBT1E1 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 4.5V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Drain to Source Voltage (Vdss) | 12V |
Detailed Description | P-Channel 12V 5.3A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot |
Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
RFQ |
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