SIA477EDJT-T1-GE3
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SIA477EDJT-T1-GE3
| Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|
| Description | MOSFET P-CH 12V 12A SC70-6 |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® SC-70-6 Single |
| Series | TrenchFET® Gen III |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 5A, 4.5V |
| Power Dissipation (Max) | 19W (Tc) |
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® SC-70-6 |
| Other Names | SIA477EDJT-T1-GE3CT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 3050pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Detailed Description | P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$0.181
- 200 pcs$0.07
- 500 pcs$0.067
- 1000 pcs$0.066
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
Request Quote
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Introduce of SIA477EDJT-T1-GE3
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