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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP1M003A080CH

GP1M003A080CH

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GP1M003A080CH

ManufacturerGlobal Power Technologies Group
DescriptionMOSFET N-CH 800V 3A DPAK
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-252, (D-Pak)
Series -
Rds On (Max) @ Id, Vgs 4.2 Ohm @ 1.5A, 10V
Power Dissipation (Max) 94W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names 1560-1155-2
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 696pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 3A (Tc) 94W (Tc) Surface Mount TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25°C 3A (Tc)

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