GP2M002A065FG
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GP2M002A065FG
| Manufacturer | Global Power Technologies Group |
|---|---|
| Description | MOSFET N-CH 650V 1.8A TO220F |
| Category | Discrete Semiconductor Products |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220F |
| Series | - |
| Rds On (Max) @ Id, Vgs | 4.6 Ohm @ 900mA, 10V |
| Power Dissipation (Max) | 17.3W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 Full Pack |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 353pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Detailed Description | N-Channel 650V 1.8A (Tc) 17.3W (Tc) Through Hole TO-220F |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| RFQ | |
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