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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPI65R660CFDXKSA1

IPI65R660CFDXKSA1

IPI65R660CFDXKSA1
International Rectifier (Infineon Technologies)

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IPI65R660CFDXKSA1

ManufacturerInternational Rectifier (Infineon Technologies)
DescriptionMOSFET N-CH 650V 6A TO262
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Vgs(th) (Max) @ Id 4.5V @ 200µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO262-3
Series CoolMOS™
Rds On (Max) @ Id, Vgs 660 mOhm @ 2.1A, 10V
Power Dissipation (Max) 62.5W (Tc)
Packaging Tube
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names IPI65R660CFD
IPI65R660CFD-ND
SP000861696
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 615pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Detailed Description N-Channel 650V 6A (Tc) 62.5W (Tc) Through Hole PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 6A (Tc)

IPx65R660CFD

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