EMF22T2R
EMF22T2R
Manufacturer | LAPIS Semiconductor |
---|---|
Description | TRANS NPN PREBIAS/NPN 0.15W EMT6 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
Transistor Type | 1 NPN Pre-Biased, 1 NPN |
Supplier Device Package | EMT6 |
Series | - |
Resistor - Emitter Base (R2) | 10 kOhms |
Resistor - Base (R1) | 10 kOhms |
Power - Max | 150mW |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-563, SOT-666 |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz, 320MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 270 @ 10mA, 2V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA, 500mA |
RFQ |
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