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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMG11T2R

EMG11T2R

EMG11T2R
LAPIS Semiconductor

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EMG11T2R

ManufacturerLAPIS Semiconductor
DescriptionTRANS 2NPN PREBIAS 0.15W EMT5
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package EMT5
Series -
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 2.2 kOhms
Power - Max 150mW
Packaging Cut Tape (CT)
Package / Case 6-SMD (5 Leads), Flat Lead
Other Names EMG11T2RCT
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Part Number *MG11

EMT5 T2R Taping Spec

EMG11, UMG11N

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Reference Price(In US Dollars)

In stock:7443
  • 1 pcs$0.09
  • 200 pcs$0.035
  • 500 pcs$0.034
  • 1000 pcs$0.033

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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