RGTH00TS65DGC11
RGTH00TS65DGC11
Manufacturer | LAPIS Semiconductor |
---|---|
Description | IGBT 650V 85A 277W TO-247N |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
Test Condition | 400V, 50A, 10 Ohm, 15V |
Td (on/off) @ 25°C | 39ns/143ns |
Switching Energy | - |
Supplier Device Package | TO-247N |
Series | - |
Reverse Recovery Time (trr) | 54ns |
Power - Max | 277W |
Packaging | Tube |
Package / Case | TO-247-3 |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 15 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Type | Standard |
IGBT Type | Trench Field Stop |
Gate Charge | 94nC |
Detailed Description | IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N |
Current - Collector Pulsed (Icm) | 200A |
Current - Collector (Ic) (Max) | 85A |
RFQ |
Reference Price(In US Dollars)
- 1 pcs$5.996
- 10 pcs$5.349
- 25 pcs$4.814
- 100 pcs$4.386
- 250 pcs$3.958
- 500 pcs$3.552
- 1000 pcs$2.996
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of RGTH00TS65DGC11
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