SIE822DF-T1-GE3
SIE822DF-T1-GE3
Manufacturer | Electro-Films (EFI) / Vishay |
---|---|
Description | MOSFET N-CH 20V 50A POLARPAK |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 10-PolarPAK® (S) |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 18.3A, 10V |
Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | 10-PolarPAK® (S) |
Other Names | SIE822DF-T1-GE3TR SIE822DFT1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S) |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
RFQ |
Reference Price(In US Dollars)
- 3000 pcs$1.668
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of SIE822DF-T1-GE3
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