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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIE812DF-T1-E3

SIE812DF-T1-E3

SIE812DF-T1-E3
Vishay / Siliconix

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SIE812DF-T1-E3

ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 40V 60A 10-POLARPAK
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Test 8300pF @ 20V
Voltage - Breakdown 10-PolarPAK® (L)
Vgs(th) (Max) @ Id 2.6 mOhm @ 25A, 10V
Technology MOSFET (Metal Oxide)
Series TrenchFET®
RoHS Status Tape & Reel (TR)
Rds On (Max) @ Id, Vgs 60A (Tc)
Polarization 10-PolarPAK® (L)
Other Names SIE812DF-T1-E3TR
SIE812DFT1E3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 24 Weeks
Manufacturer Part Number SIE812DF-T1-E3
Input Capacitance (Ciss) (Max) @ Vds 170nC @ 10V
Gate Charge (Qg) (Max) @ Vgs 3V @ 250µA
FET Feature N-Channel
Expanded Description N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Drain to Source Voltage (Vdss) -
Description MOSFET N-CH 40V 60A 10-POLARPAK
Current - Continuous Drain (Id) @ 25°C 40V
Capacitance Ratio 5.2W (Ta), 125W (Tc)

SIE812DF

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In stock:14491
  • 3000 pcs$1.934

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