TC58BVG2S0HBAI4
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TC58BVG2S0HBAI4
| Manufacturer | Toshiba Memory America, Inc. |
|---|---|
| Description | IC FLASH 4G PARALLEL 63TFBGA |
| Category | Integrated Circuits (ICs) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Write Cycle Time - Word, Page | 25ns |
| Voltage - Supply | 2.7 V ~ 3.6 V |
| Technology | FLASH - NAND (SLC) |
| Supplier Device Package | 63-TFBGA (9x11) |
| Series | Benand™ |
| Packaging | Tray |
| Package / Case | 63-VFBGA |
| Other Names | ASTC58BVG2S0HBAI4 TC58BVG2S0HBAI4JDH TC58BVG2S0HBAI4YCL TC58BVG2S0HBAIJDH |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Memory Type | Non-Volatile |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Memory Format | FLASH |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Detailed Description | FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 63-TFBGA (9x11) |
| Access Time | 25ns |
| RFQ | |
Reference Price(In US Dollars)
- 1 pcs$5.934
- 10 pcs$5.415
- 25 pcs$5.312
- 50 pcs$5.275
- 210 pcs$4.733
- 420 pcs$4.714
- 630 pcs$4.42
- 1050 pcs$4.232
The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer
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Introduce of TC58BVG2S0HBAI4
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