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Home > Products > Integrated Circuits (ICs) > Memory > TC58BYG2S0HBAI6

TC58BYG2S0HBAI6

TC58BYG2S0HBAI6
Toshiba Memory America, Inc.

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TC58BYG2S0HBAI6

ManufacturerToshiba Memory America, Inc.
DescriptionIC FLASH 4G PARALLEL 67VFBGA
CategoryIntegrated Circuits (ICs)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Write Cycle Time - Word, Page 25ns
Voltage - Supply 1.7 V ~ 1.95 V
Technology FLASH - NAND (SLC)
Supplier Device Package 67-VFBGA (6.5x8)
Series Benand™
Packaging Tray
Package / Case 67-VFBGA
Other Names TC58BYG2S0HBAI6JDH
TC58BYG2S0HBAI6YCL
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Memory Type Non-Volatile
Memory Size 4Gb (512M x 8)
Memory Interface Parallel
Memory Format FLASH
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 67-VFBGA (6.5x8)
Access Time 25ns

TC58BYG2S0HBAI6

RFQ

Reference Price(In US Dollars)

In stock:3064
  • 1 pcs$6.015
  • 10 pcs$5.495
  • 25 pcs$5.39
  • 50 pcs$5.353
  • 100 pcs$4.802
  • 338 pcs$4.783
  • 676 pcs$4.485
  • 1014 pcs$4.294

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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Introduce of TC58BYG2S0HBAI6

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