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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN1962TE85LF

RN1962TE85LF

RN1962TE85LF
Toshiba Semiconductor and Storage

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RN1962TE85LF

ManufacturerToshiba Semiconductor and Storage
DescriptionTRANS 2NPN PREBIAS 0.5W US6
CategoryDiscrete Semiconductor Products
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package US6
Series -
Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 10 kOhms
Power - Max 500mW
Packaging Cut Tape (CT)
Package / Case 6-TSSOP, SC-88, SOT-363
Other Names RN1962TE85LFCT
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 500mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

RN1961-66

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Reference Price(In US Dollars)

In stock:522898
  • 1 pcs$0.245
  • 10 pcs$0.226
  • 25 pcs$0.163
  • 100 pcs$0.126
  • 250 pcs$0.079
  • 500 pcs$0.068
  • 1000 pcs$0.046

The above prices are exclusive of taxes and shipping charges.The exact price is subject to the final offer

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