RN1965(TE85L,F)
RN1965(TE85L,F)
Manufacturer | Toshiba Semiconductor and Storage |
---|---|
Description | TRANS 2NPN PREBIAS 0.2W US6 |
Category | Discrete Semiconductor Products |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Supplier Device Package | US6 |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 200mW |
Packaging | Tape & Reel (TR) |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Other Names | RN1965(TE85LF)TR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |
RFQ |
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